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 FDT434P
January 2000
FDT434P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
* -5.5 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V RDS(ON) = 0.070 @ VGS = -2.5 V. * Low gate charge (13nC typical) * High performance trench technology for extremely low RDS(ON) . * High power and current handling capability in a widely used surface mount package.
Applications
* Low Dropout Regulator * DC/DC converter * Load switch * Motor driving
D
D
D
D
S D
SOT-223
S
G
G
D
S
SOT-223*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
-20 8
(Note 1a)
Units
V V A W
-6 -30 3 1.3 1.1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
C/W C/W
Package Marking and Ordering Information
Device Marking 434 Device FDT434P Reel Size 13'' Tape width 12mm Quantity 2500 units
1999 Fairchild Semiconductor Corporation
FDT434P Rev. C1 (W)
FDT434P
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 A ID = -250 A,Referenced to 25C VDS = -16 V, VGS = 8 V, VGS = -8 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
-20
Typ
Max Units
V
Off Characteristics
-28 -1 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = -250 A ID = -250 A,Referenced to 25C VGS = -4.5 V, VGS = -4.5 V, VGS = -2.5 V, VGS = -4.5 V, VDS = -10 V, ID = -6 A ID = -6 A TJ=125C ID = -4 A VDS = -5 V ID = -6 A
-0.4
-0.6 2 0.040 0.067 0.050
-1
V mV/C
0.050 0.083 0.070
ID(on) gFS
On-State Drain Current Forward Transconductance
-20 6.5
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -10 V, f = 1.0 MHz
V GS = 0 V,
1240 270 100
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -5 V, VGS = -4.5 V,
ID = -1 A, RGEN = 6
8 15 45 30
16 25 65 50 19
ns ns ns ns nC nC nC
VDS = -10 V, VGS = -4.5 V
ID = -6 A,
13 1.8 3
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A
(Note 2)
-1.3 -0.75 -1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 42C/W when 2 mounted on a 1in pad of 2 oz copper
b) 95/W when mounted 2 on a .0066 in pad of 2 oz copper
c) 110/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDT434P Rev. C1 (W)
FDT434P
Typical Characteristics
20 -3. 0V - 2.5V
RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.8
VGS = - 4.5V 16
1.6
12
1.4
VGS = -2.5V -3.0V
8
- 2. 0V
1.2
-3.5V -4.0V -4.5V
4
D
1
-1. 5V 0 0 1 2 3 4 V - DS, DR - SOU AIN RCE VO LTAGE ( V) 5
R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.4
ID = - 6 A VGS = - 4.5V

R
VDS = -5V
- I D, DRAIN CURRENT (A) 12
TJ = -55C 25C 125C
- I S, REVERSE DRAIN CURRENT (A)
I
0.8 0 5 10 - I D, DRAIN CURRENT (A) 15 20
DR AI
15 9 6 3
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
I D = -6 A
1.6

T =125C A
1.2
1

25C
0.8
0.6 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150


Figure 3. On-Resistance Variation withTemperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
15
VGS = 0V TJ = 125C
1
25C -55C
0.1
0.01
0 0.9
1.2
1.5 1.8 2.1 2.4 -VGS , GATE TO SOURCE VOLTAGE (V)
2.7
0.001
0
0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDT434P Rev. C1 (W)
FDT434P
Typical Characteristics
5 I D = -6.0A 4 V D S - 5V = -1 0V -1 5V
2500
1000
3 400 2 200 C APAC ITAN CE( F 1
GS
100 50 0. 1
-I D, DRAIN CURRENT (A)
POWER (W)
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
V GA
0
0
3
6 9 Q g , GATE CH ARGE (nC)
12
15
0. 3 -V
1 3 , D AIN TO SOU R RCE VOL E (V) TAG
10
20
Figure 7. Gate Charge Characteristics.
100 100s 10 RDS(ON) LIMIT 1s 10s DC 1 VGS= -4.5V SINGLE PULSE RJA= 42oC/W TA= 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 10ms 100ms
Figure 8. Capacitance Characteristics.
200 SINGLE PULSE 160 R JA = 110 C/W T A = 25 C 120
o o
80
0.1
40
0 0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse
RJA(t) = r(t) + RJA RJA = 110 C/W P(pk) t1 t2 TJ - T A = P * RJA(t) Duty Cycle, D = t 1 / t2
0.001 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design.
FDT434P Rev. C1 (W)
SOT-223 Tape and Reel Data and Package Dimensions
SOT-223 Packaging Configuration: Figure 1.0
Customized Label
Packaging Description:
SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
F63TNR Label Antistatic Cover Tape
Static Dissipative Embossed Carrier Tape
F852 014
SOT-223 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 343x64x343 5,000 0.1246 0.7250 D84Z TNR 500 7" Dia 184x187x47 1,000 0.1246 0.1532
F852 014
F852 014
F852 014
SOT-223 Unit Orientation
343mm x 342mm x 64mm Intermediate box for Standard
F63TNR Label
F63TNR Label 184mm x 184mm x 47mm Pizza Box for D84Z Option
F63TNR Label sample
LOT: CBVK741B019 FSID: PN2222A QTY: 3000 SPEC:
SOT-223 Tape Leader and Trailer Configuration: Figure 2.0
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
Carrier Tape Cover Tape
Components Trailer Tape 300mm minimum or 38 empty pockets Leader Tape 500mm minimum or 62 empty pockets
September 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SOT-223 (12mm)
A0
6.83 +/-0.10
B0
7.42 +/-0.10
W
12.0 +/-0.3
D0
1.55 +/-0.05
D1
1.50 +/-0.10
E1
1.75 +/-0.10
E2
10.25 min
F
5.50 +/-0.05
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
1.88 +/-0.10
T
0.292 +/0.0130
Wc
9.5 +/-0.025
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SOT-223 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
12mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
5.906 150 7.00 178
Dim W1
0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0
Dim W2
0.724 18.4 0.724 18.4
Dim W3 (LSL-USL)
0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4
12mm
13" Dia
July 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 (FS PKG Code 47)
1:1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.1246
September 1999, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. D


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